Process for the formation of a functional deposited film containing group IV atoms or silicon atoms and group IV atoms by microwave plasma chemical vapor deposition process

A process for the formation of a functional deposited film containing silicon atoms and atoms belonging to the group IV of the periodical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate disposed therein, a compound (1) containing silicon and a compound (2) represented by the following general formula (I) as the film-forming raw material and, if required, a compound (3) containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of such compounds is previously activated in an activation space disposed separately from said film forming space, while forming hydrogen atoms in excited state which cause chemical reaction with at least one of said compounds (1), (2) and (3) in the gaseous state or in the activated state in an activation space different from said film forming space and introducing them into the film-forming space, thereby forming the deposited film on said substrate, wherein said hydrogen atoms in excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atoms is controlled:

• AaBb (I)
• where A represents an element among those elements other than silicon belonging to the group IV of the periodical table, B represents a member selected from hydrogen (H), halogen (X) and hydrocarbon group, a represents a positive integer equal to or multiple integer of the valence number for B and b represents a positive integer.