Etching device, and etching method
AssigneeTokyo Electron Limited
InventorsSatoshi Kagatsume, Kazuo Fukasawa
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Abstract
An etching device comprising a housing in which etching process is carried out, an electrode system having lower and upper electrodes opposed to each other used to generate plasma between these electrodes, while a semiconductor wafer is being placed on the lower electrode, a lifter system to move the lower electrode up and down, a high-frequency power source for applying current between these electrodes, a holder member located between the lower and upper electrodes to hold the wafer at a certain position between these electrodes, and a gas supply means for supplying reaction gases used to generate plasma, between the lower and upper electrodes.
Claims22
An etching device comprising:
- housing in which etching process is carried out;
- electrode means having first and second electrodes opposed to each other, for generating plasma between these electrodes while an object to be processed is being supported on the first electrode;
- drive means for driving said first electrode toward said second electrode;
- power-supplying means for applying a current between the first and second electrodes;
- holding means located between the first and second electrodes, for holding the object when said first electrode is moved, thereby pushing the object;
- and
- gas-supplying means for supplying reaction gases, which serve to etch the object, into a gap between the first and second electrodes.
An etching device comprising:
- a housing in which etching process is carried out;
- electrode means having first and second electrodes opposed to each other, for generating plasma between these electrodes, while an object to be processed so being supported on said first electrode;
- moving means located lower than the top of the lower electrode, for lifting and lowering the lower electrode up and down;
- power-supplying means for applying current between these electrodes;
- gas-supplying means for supplying reaction gases, which serve to generate plasma between the lower and upper electrodes;
- and
- cooling means for applying reaction gases to the object and cooling it.
A method of etching an object held between first and second electrodes, which plasma generated between these electrodes, said method comprising the steps of:
- supporting the object on said first electrode;
- moving said first electrode, thereby to push the object onto a holding member located between said first and second electrodes, whereby the object is held by said holding member;
- and
- generating plasma between said first and second electrodes, while supplying reaction gases into a gap between said first and second electrodes, thereby etching the object.
Dependencies are inferred from the claim text.