Mask repair system
AssigneeCanon Kabushiki Kaisha
InventorsMitsuaki Amemiya, Shunichi Uzawa
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AssigneeCanon Kabushiki Kaisha
InventorsMitsuaki Amemiya, Shunichi Uzawa
Estimating the term…
A method and apparatus for inspecting and repairing a mask usable in the manufacture of semiconductor microcircuits, by using an electron beam is disclosed. The inspection and repair of a mask pattern are made in a single apparatus, by using a controlled current of an electron beam. For inspection, the surface of a mask having a mask pattern and a radiation-sensitive layer, covering it, is scanned with an electron beam and, by detecting secondary electrons or reflected electrons caused at that time, the state of the pattern is inspected. If any defect is detected, the portion of the radiation-sensitive layer on the detected defect is irradiated with an electron beam of greater magnitude than that for the inspection and, thereafter, the exposed portion of the radiation-sensitive layer is removed. Then, etching or plating is made to the thus uncovered portion, whereby repair of the mask pattern is made.
An apparatus for inspecting and repairing a mask, comprising:
A method of repairing a defect of a pattern of a mask, wherein the pattern is formed on a substrate, said method comprising the steps of:
A method of repairing any defect of a pattern of a mask, wherein the pattern is formed on a substrate and the defect is provided by an unnecessary pattern portion, said method comprising the steps of:
A method of inspecting a photomask having a mask pattern selectively formed on a substrate and of repairing any defect of the photomask, said method comprising the steps of:
Dependencies are inferred from the claim text.