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US 4,905,078 AGranted
Semiconductor device
AssigneeHitachi, Ltd.
InventorsKazuhiko Sagara, Yoichi Tamaki, Noriyuki Homma, Tohru Nakamura
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Abstract
A semiconductor device includes a semiconductor layer provided above a pair of bipolar transistors formed in a surface region of a semiconductor body. Schottky barrier diodes and resistors are formed in the semiconductor layer. The pair of bipolar transistors, the Schottky barrier diodes and the resistors are electrically connected to constitute a bipolar memory. Since the Schottky barrier diodes and the resistors can be formed above the bipolar transistors, an area required for the memory cell can be made greatly small and the occurrence of an hindrance caused by .alpha. particles is minimal.
Claims29
A semiconductor device comprising:
- first and second vertical bipolar transistors respectively formed in first and second isolated protruding epitaxial layer segments which segments are formed on an upper surface of a semiconductor substrate, each epitaxial layer segment including a first region of a first conductivity type, a second region of a second conductivity type and a third region of said first conductivity type, wherein said first, second and third regions are stacked in descending order from an upper surface of said epitaxial layer, and wherein an upper surface of said first region is in the same plane as the upper surface of said epitaxial layer segments;
- an insulating film formed above the upper surface of said semiconductor substrate and having openings wherein the first regions of said first and second epitaxial layer segments are disposed;
- a first semiconductor layer, having at least first and second adjacent regions respectively having different impurity concentrations and being of the same conductivity type as the first region of said first and second epitaxial layer segments which form said transistors, said first semiconductor layer being formed above said insulting film and being in electrical contact, via the first region thereof, with the first region of said first epitaxial layer segment through one of said openings of said insulating film and wherein the second region of said first semiconductor layer is in electrical contact on one side thereof with the first region of said semiconductor layer, which first region overlies said first epitaxial portion, and is in electrical contact on another side thereof, through a further opening of said insulating film, with the second region of said second epitaxial layer segment;
- a Schottky barrier diode located above the first region of said first epitaxial layer segment, having a junction formed on the first region at an upper surface region of said first semiconductor layer, said first region of said first semiconductor layer being a low resistive region connecting said Schottky barrier diode to the first region of said first epitaxial layer segment;
- and
- wherein the second region of said first semiconductor layer is of a relatively lower impurity concentration doped region than said first region thereof and has a highly concentrated impurity doped region formed thereon.
3 more elements
A semiconductor device comprising:
- at least first and second vertical bipolar transistors, formed on a main surface of a semiconductor substrate, wherein each vertical bipolar transistor includes a first region of a first conductivity type overlying a second region of a second conductivity type, complementary to said first conductivity type, and said second region overlying a third region of said first conductivity type;
- a first insulating film formed on said main surface of said semiconductor substrate and having openings wherein said vertical bipolar transistors are disposed;
- a first polycrystalline semiconductor layer formed on said first insulating film and between said first and second vertical bipolar transistors, having an upper surface, and being in electrical contact with said second region of each vertical transistor, said first polycrystalline semiconductor layer being divided by an isolation region into segments so as to electrically isolate the second regions of said first and second vertical bipolar transistors from each other;
- a second insulating film formed above the upper surfaces of said first and second vertical bipolar transistors, on said first polycrystalline semiconductor layer and on an upper surface of said isolation region and having openings over the first regions of said vertical bipolar transistors and over one of said segments of said first polycrystalline semiconductor layer which is in electrical contact with the second region of said second vertical bipolar transistor;
- a second polycrystalline semiconductor layer of said first conductivity type, having at least first and second regions of different impurity doping concentrations, formed on the upper surface of the first region of said first vertical bipolar transistor through an opening of said second insulating film and extending over said second insulating film overlying said upper surfaces between said transistors and being in contact with said one segment of the upper surface of said first polycrystalline silicon film through an opening of said second insulating film so as to effect electrical contact between the first region of said first transistor with the second region of said second transistor;
- a Schottky barrier diode having a junction formed at an upper surface of said first region of said second polycrystalline semiconductor layer directly above the first region of said first vertical bipolar transistor, said Schottky barrier diode being electrically connected, via said first region of said second polycrystalline semiconductor layer, to said first region of said transistor, said first region of said second polycrystalline semiconductor layer providing a low resistive connection between said Schottky barrier diode and the first region of said first transistor;
- wherein the second region of said second polycrystalline semiconductor layer is of a lower impurity doping concentration than said first region thereof thereby providing high resistance;
- and
- wherein said second region of said second polycrystalline semiconductor layer is electrically connected to the first region of said second polycrystalline semiconductor layer and the second region of said second vertical bipolar transistor, via said one segment of said first polycrystalline semiconductor layer.
6 more elements
Dependencies are inferred from the claim text.