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US 4,905,068 AGranted
Semiconductor device having interconnection layers of T-shape cross section
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsShinichi Satoh, Makoto Hirayama, Masao Nagatomo, Ikuo Ogoh, Yoshikazu Ohno, Masato Fujinaga
Life of this patent
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Abstract
A cell plate (6) is formed on a main surface of a semiconductor substrate (7) with an insulating film (8) interposed therebetween and an interconnection (1) having T-shape cross section is formed on the cell plate (6) with an interlayer insulating film (11) interposed therebetween. An upper insulating film (12) is formed to cover the interconnection (1).
Claims13
An interconnecting structure of a semiconductor device comprising:
- a conductor;
- an insulating film formed on said conductor;
- and
- an interconnection layer electrically insulated from said conductor, said interconnection layer formed on said insulating film and having T-shape cross section comprising a vertical portion above and overlapping said conductor and a horizontal portion in relation to said conductor, upper surfaces of said vertical and horizontal portions of said interconnection layer lying in a common plane whereby a low parasitic capacitance exists between said conductor and said interconnection layer.
1 more element
An interconnecting structure of a semiconductor device comprising:
- a conductor;
- an insulating film formed on said conductor;
- and
- an interconnection layer electrically insulated from said conductor, said interconnection layer formed on said insulating film and having T-shape cross section comprising a vertical portion and a horizontal portion in relation to said conductor whereby a low parasitic capacitance exists between said conductor and said interconnection layer, upper surfaces of said vertical and horizontal portions of said interconnection layer lying in a common plane,
- wherein said insulating film has a two-layer structure comprising a lower insulating film formed below said vertical portion of said interconnection layer and an upper insulating film formed between said lower insulating film and said horizontal portion of said interconnection layer.
2 more elements
An interconnecting structure of a semiconductor device comprising:
- a conductor;
- an insulating film formed on said conductor;
- and
- an interconnection formed on said insulating film and having T-shape cross section comprising a vertical portion and a horizontal portion in relation to said conductor, wherein said insulating film has a two-layer structure comprising a lower insulating film formed below said vertical portion of said interconnection layer and an upper insulating film formed between said lower insulating film and said horizontal portion of said interconnection layer, a film thickness of said upper insulating film substantially equal to a thickness of said lower insulating film and a dielectric constant of said upper insulating film being smaller than a dielectric constant of said lower insulating film.
1 more element
An interconnecting structure of a semiconductor device comprising:
- a conductor;
- an insulating film formed on said conductor;
- and
- an interconnection formed on said insulating film and having T-shape cross section comprising a vertical portion and a horizontal portion in relation to said conductor, upper surfaces of said vertical and horizontal portions of said interconnection layer lying in a common plane, said insulating film having a two-layer structure comprising a lower insulating film formed below said vertical portion of said interconnection layer and an upper insulating film formed between said lower insulating film and said horizontal portion of said interconnection layer, a dielectric constant of said upper insulating film substantially equal to a dielectric constant of said lower insulating film and a film thickness of said upper insulating film being larger than a film thickness of said lower insulating film.
1 more element
An interconnecting structure of a semiconductor device comprising:
- a conductor;
- an insulating film formed on said conductor;
- and
- a bit line electrically insulated from said conductor, said interconnection layer formed on said insulating film and having T-shape cross section comprising a vertical portion above and overlapping said conductor and a horizontal portion in relation to said conductor whereby a low parasitic capacitance exists between said conductor and said bit line.
1 more element
An interconnecting structure of a semiconductor device comprising:
- a conductor;
- an insulating film formed on said conductor;
- and
- an interconnection layer electrically insulated from said conductor, said interconnection layer formed on said insulating film and having T-shape cross section comprising a vertical portion and a horizontal portion in relation to said conductor, upper surfaces of said vertical and horizontal portions of said interconnection layer lying in a common plane whereby a low parasitic capacitance exists between said conductor and said interconnection layer,
- wherein said interconnection layer is a word line.
2 more elements
An interconnecting structure of a semiconductor device comprising:
- a conductor;
- an insulating film formed on said conductor;
- and
- an interconnection formed on said insulating film and having T-shape cross section comprising a vertical portion above and overlapping said conductor and a horizontal portion in relation to said conductor, wherein said semiconductor device comprises a dynamic RAM and said conductor is a cell plate constituting said dynamic RAM.
1 more element
An interconnecting structure of a semiconductor device comprising:
- a conductor;
- an insulating film formed on said conductor;
- and
- an interconnection formed on said insulating film and having T-shape cross section comprising a vertical portion above and overlapping said conductor and a horizontal portion in relation to said conductor, wherein said semiconductor device comprises a dynamic RAM having a switching transistor and said conductor is a gate electrode constituting said switching transistor of said dynamic RAM.
1 more element
Dependencies are inferred from the claim text.