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US 4,904,620 AGranted
Method of manufacturing a semiconductor device including a titanium disilicide contact
AssigneeU.S. Philips Corporation
InventorJohannes E. J. Schmitz
Life of this patent
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Abstract
The invention relates to a method of manufacturing a semiconductor device, in which a titanium disilicide layer is formed on a substrate by means of a chemical reaction activated by a plasma from the gaseous phase. In a readily reproducible manner, this is achieved in that titanium silicide layers (2,4,6) having an atomic ratio of titanium to silicon of at least about 4:5 and silicon layers (3,5,7) are alternately deposited from the gaseous phase and these layers are homogenized in a heat treatment to a titanium disilicide layer.
Claims9
A method of manufacturing a semiconductor device comprising the steps of:
- (a) forming alternate layers of equal numbers of titanium silicide and silicon on a substrate by a CVD technique, said layers of titanium silicide having an atomic ratio of titanium to silicon of about 4:5,
- wherein said alternate layers are deposited on said substrate alternately from a gaseous phase, and
- (b) subsequently heating said alternate layers of titanium silicide and layers of silicon to a homogenized titanium disilicide layer.
Dependencies are inferred from the claim text.