Back to results
US 4,903,094 AGranted
Memory cell structure having radiation hardness
AssigneeGeneral Electric Company
InventorsDora Plus, Roger G. Stewart
Life of this patent
Estimating the term…
Abstract
A memory cell structure has a thin insulating oxide barrier layer between an insulating body, such as sapphire, and a conducting layer, such as polysilicon, to prevent photoconduction between the body and the layer. Upper and lower conducting layers form a capacitor with a source and a drain in the lower layer and a gate in the upper layer to isolate the sensitive gate from a substrate during photoconduction. These features help the cell resist a radiation-induced logic state change.
Claims13
A radiation hardened structure comprising:
- an electrically insulating body;
- a conducting layer overlying said body for a given region, said given region comprising the entire overlay area between said body and said layer;
- and
- an oxide barrier layer means disposed between and contiguous with both of said conducting layer and said body for preventing photoconduction between said layer and said body, said barrier layer extending over at least said given region and having a maximum thickness at about 300 nm.
1 more element
A structure comprising:
- an insulating body;
- a first conducting layer overlying said body and including spaced first source and drain electrodes, spaced second source and drain electrodes, and first and second capacitor plates proximate and connected to said first and second drain electrodes, respectively;
- an insulating layer overlaying both said body and said conducting layer;
- and
- a second conducting layer overlying said insulating layer and including first and second gate electrodes respectively overlying the regions between said first source and drain electrodes and between said second source and drain electrodes, a resistor having a first end connected to and proximate said first gate electrode and a second end connected to said first conducting layer, and third and fourth capacitor plates respectively overlying said first and second capacitor plates and respectively connected to said first and second gate electrodes.
2 more elements
Dependencies are inferred from the claim text.