Method for selectively depositing tungsten on a substrate by using a spin-on metal oxide
AssigneeMotorola, Inc.
InventorsTed R. White, Jeff L. Klein
Life of this patent
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Abstract
A process for selectively depositing a metal such as tungsten on a substrate material is provided. In one form, a layer of insulating material such as silicon dioxide is formed on the substrate. A layer of either aluminum oxide or titanium oxide is then formed over the substrate by a spin-on technique. A straight-wall contact region to the substrate is formed and tungsten may then be quickly and selectively formed in the contact region only with chemical vapor deposition at a high pressure. In another form, the aluminum oxide or titanium oxide layer may be thickly formed directly above the substrate without the silicon dioxide layer being formed.
Claims8
A method for selectively depositing tungsten on a semiconductor substrate during formation of an electronic device, comprising the sequential steps of:
- providing a substrate material;
- forming a layer either of aluminum oxide or titanium oxide above the substrate material;
- forming a contact/via area with the substrate material by removing the layer of either aluminum oxide or titanium oxide in a predetermined area above the substrate material and elsewhere maintaining either the aluminum oxide or titanium oxide exposed at a top surface of the device;
- placing the device in a chemical vapor deposition reactor and heating the substrate to a predetermined temperature;
- coupling tungsten hexafloride, a predetermined reducing gas, and a predetermined inert carrier gas into the reactor;
- and
- selectively depositing tungsten on the substrate material to a predetermined thickness by vapor deposition substantially without depositing the tungsten either on the aluminum oxide or titanium oxide at the top surface of the device.
A process for selectively forming a metal on a substrate surface via chemical vapor deposition (CVD) during formation of an electronic device, comprising the sequential steps of:
- providing a substrate material;
- forming an insulating material on a top surface of the substrate material;
- forming a layer of aluminum oxide on a top surface of the insulating material;
- forming a contact/via area with the substrate material by removing the insulating material and aluminum oxide layer above a predetermined portion of the substrate material and maintaining the aluminum oxide exposed on a top surface of the device;
- placing the device in a chemical vapor deposition reactor and heating the substrate to a predetermined temperature;
- coupling tungsten hexafloride, a predetermined reducing gas, and a predetermined inert carrier gas into the reactor;
- and
- selectively depositing the metal on the substrate material to a predetermined thickness by vapor deposition substantially without depositing the metal on a top surface of the aluminum oxide layer.
Dependencies are inferred from the claim text.