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US 4,902,379 AGranted
UHV compatible lift-off method for patterning nobel metal silicide
AssigneeEastman Kodak Company
InventorHoward E. Rhodes
Life of this patent
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Abstract
A method for making a pattern of a nobel metal silicide selectively forming the silicide under UHV conditions and then removes unreacted metal, by using a UHV-compatible lift-off process.
Claims3
A method of forming a pattern of a noble metal silicide on a silicon substrate, comprising the steps of:
- (a) forming a first UHV (ultra High Vacuum)=compatible inorganic layer of a first material on the silicon substrate;
- (b) forming a second UHV (ultra High Vacuum)=compatible layer of a second material on the first layer;
- (c) removing selective regions of the second inorganic layer and the underlying first layer exposing the surface of the silicon substrate;
- (d) undercutting portions of the first layer so that the second layer overhangs the first layer;
- (e) depositing a noble metal at a pressure of 10.sup.-8 Torr or less and heating the deposited material at a temperature of 250.degree. C. to 800.degree. C. to form metal silicide where the deposited metal contacts the exposed silicon;
- and
- (f) removing the second layer to lift-off the unreacted metal.
4 more elements
A method of forming a pattern of an iridium silicide on a silicon substrate, comprising the steps of:
- (a) forming a first UHV (ultra High Vacuum)=compatible inorganic oxide layer on the silicon substrate;
- (b) forming a second UHV (ultra High Vacuum)=compatible nitride layer on the first layer;
- (c) removing by selective etching regions of the second inorganic layer and the underlying first layer exposing the surface of the silicon substrate;
- (d) etching to undercut portions of the first layer so that the second layer overhangs the first layer;
- (e) depositing iridium metal at a pressure of 10.sup.-8 Torr or less and heating the deposited material at a temperature of 250.degree. C. to 800.degree. C. to form iridium silicide where the deposited metal contacts the exposed silicon;
- and
- (f) removing the second layer by an etch to lift-off the unreacted iridium metal.
4 more elements
Dependencies are inferred from the claim text.