Structure for fast-recovery bipolar devices
AssigneeUnitrode Corporation
InventorsCarson E. Weaver, Philip L. Hower
Life of this patent
Estimating the term…
Abstract
A bipolar junction structure comprising a Schottky barrier rectifying contact juxtaposed to a p-n junction having the distribution of p+ diffusions common to a guard ring structure on the Schottky barrier area.
Claims9
A rectifying semiconductor device providing increased minority carrier recombination during the recovery phase of the operation of said device, comprising:
- a p-N junction formed from a P+ diffusion region having a grid-like pattern in an N-type substrate;
- and
- a metalization layer in contact with said P+ diffusion region and said substrate, forming an array of Schottky barrier rectifying contact cells, wherein each of said cells is bounded by said P+ diffusion region.
The rectifying semiconductor device of claim I wherein the area of said P+ diffusion region is substantially equal to the aggregate cell area.
A rectifying semiconductor device providing increased minority carrier recombination during the recovery phase of the operation of said device, including:
- a plurality of P-N junctions formed from a plurality of non-contiguous P+ diffusion regions in an N-type substrate;
- and
- a metalization layer in contact with each of said non-contiguous P+ diffusion regions, and in contact with said N-type substrate, to form a continuous Schottky barrier contact with other than said P+ diffusion regions.
A rectifying semiconductor device providing increased minority carrier recombination during the recovery phase of the operation of said device, comprising:
- a P-N junction formed from a P+ diffusion region in an N-type substrate;
- a metalization layer in contact with said P+ diffusion region and said N-type substrate to form a Schottky barrier contact;
- and
- an insulating region disposed about the periphery of the P+ diffusion region and in contact with said P+ diffusion region and said N-type substrate;
- wherein said Schottky barrier contact is disposed within three minority carrier diffusion lengths of said P-N junction, and wherein the ratio of the width of said P+ diffusion region to the width of said Schottky barrier contact is no greater than 95:5.
Dependencies are inferred from the claim text.