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US 4,900,938 AGranted
Method of treating photoresists
AssigneeUshio Denki Kabushiki Kaisha
InventorsShinji Suzuki, Hiroko Suzuki, Tetsuji Arai
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Abstract
A method of treating positive photoresist materials applied on a semiconductor wafer placed on a support, which meets the demand for high-speed treatment and improvement in heat-resistance and plasma-resistance of the developed positive photoresist image. The developed positive photoresist image is exposed to radiant lights including ultraviolet rays in an chamber filled with gas in which oxygen and/or moisture are reduced or not included.
Claims1
An apparatus for treating a developed positive photoresist image on a semiconductor wafer comprising:
- an ultraviolet radiation source composed of a metal vapor lamp or a metal halide vapor lamp and a mirror;
- a treating chamber having:
- a window to permit the radiant light from said ultraviolet radiation source to pass into said treating chamber;
- an intake to permit inactive gas to be drawn into said treating chamber;
- an exhaust hole to permit said inactive gas to be exhausted from said treating chamber;
- a porous plate placed within said treating chamber to separate said window and said intake from said exhaust hole;
- a support for a semiconductor wafer having a developed positive photoresist image thereon provided with temperature control mechanism within said treating chamber;
- wherein the radiant light is projected to a developed positive photoresist image on a semiconductor wafer through a window and a porous plate and wherein inactive gas is directed from an intake to an exhaust hole through a porous plate.
5 more elements
Dependencies are inferred from the claim text.