Method for patterning photo resist film
AssigneeKabushiki Kaisha Toshiba
InventorsYasushi Ito, Kazuhiko Urayama
Life of this patent
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Abstract
A method for patterning a photo resist film including the steps of coating a photo resist onto a semiconductor substrate exposing the photo resist coated and thereafter developing it, to thereby form a pattern on the photo resist film, wherein after exposure the semiconductor substrate on which the photo resist is coated is left in an atmosphere of a higher relative humidity than that at which the patterning exposure has been conducted for a time period until development.
Claims5
A method for patterning a photo resist film comprising the steps of coating a photo resist onto a semiconductor substrate, exposing the photo resist coated and thereafter developing it, thereby to form a pattern of the photo resist film,
- wherein said semiconductor substrate on which said photo resist is coated, and exposed is left in an atmosphere of a higher relative humidity than that at which the patterning exposure has been conducted for a time period before development.
Dependencies are inferred from the claim text.