Method for the deposition of high quality silicon dioxide at low temperature
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorsBrian R. Bennett, Joseph P. Lorenzo, Kenneth Vaccaro
Life of this patent
Estimating the term…
Abstract
The invention comprises a pyrolytic process for the deposition of high quality silicon dioxide at temperatures of 100.degree.-330.degree. C. Deposition is achieved by reacting silane and oxygen in the 2-12 torr pressure range, yielding deposition rates of 140 .ANG./min at 300.degree. C. and 50 .ANG./min at 120.degree. C. Measurements of refractive index (1.45-1.46), field strength (3-10.times.10.sup.6 V/cm), and resistivity (10.sup.13 -10.sup.15 -cm) indicate that the oxides are near stoichiometric SiO.sub.2. This technology appears promising the Group IV and Group III-V device applications.
Claims20
A method of depositing silicon dioxide on a substrate comprising the steps of:
- placing the substrate in a reaction chamber;
- heating the substrate to between 80.degree. C. and 330.degree. C.;
- evacuating the reaction chamber containing the substrate to 2-12 torr;
- and
- subjecting the substrate to a non-excited gas flow mixture comprising silicon and oxygen bearing compounds in order to deposit a near-stoichiometric silicon dioxide layer upon said substrate.
A method of depositing silicon dioxide on a substrate comprising the step of:
- placing the substrate in a reaction chamber;
- heating the substrate to between 80.degree. C. and 330.degree. C.;
- evacuating the reaction chamber containing the substrate to 2-12 torr;
- and
- subjecting the substrate to a substantially non-excited gas flow mixture comprising silicon and oxygen bearing compounded in order to deposit by a strictly pyrolytic method, a near-stoichiometric silicon dioxide layer upon said substrate.
A method of depositing silicon dioxide on a substrate comprising the steps of:
- placing the substrate in a reaction chamber;
- heating the substrate to between 80.degree. C. and 330.degree. C.;
- evacuating the reaction chamber containing the substrate to 2-12 torr;
- and
- subjecting the substrate to a non-excited gas flow mixture comprising silicon and oxygen bearing compounds in order to deposit a near-stoichiometric silicon dioxide layer upon said substrate wherein the silicon bearing compound is selected from the group consisting of silane, disilane, silicon tetrachloride, hexachlorodisilane, tetraethoxysilane, tetramethylcyclotetrasiloxanne and dichlorosilane.
Dependencies are inferred from the claim text.