Process for producing single-crystal ceramics
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKoichi Kugimiya, Ken Hirota, Keiichi Matsuyama
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Abstract
The invention provides a process for causing growth of single crystal from the junction of a single crystal/polycrystal joined body by a low-temperature heat treatment by making use of the solid-phase growth of crystal. The growth of single crystal can be accomplished staby, with high reliability and in a solid phase by producing a stage satisfies the conditions for abnormal grain growth only at the portion close to the junction, that is, a state in which the joined body is locally kept higher than the grain growth temperature, by making use of the temperature gradient at the junction or the corresponding concentration of the additive.
Claims9
A process for producing single-crystal ceramics, consisting essentially of the steps of placing a smooth face of a single-crystal ceramic to a corresponding smooth face of a single-crystal ceramic having the substantially same composition as said polycrystal ceramic, and joining said polycrystal and single-crystal ceramics with an adhesive layer placed therebetween, said layer containing at least one abnormal grain growth promoting element in an amount which exceeds that of said abnormal grain growth element in said polycrystal ceramic;
- heating the assembly to a bonding temperature at which said adhesive layer begins to diffuse to let said opposing smooth faces of said polycrystal and single-crystal ceramics to come into contact and to be bonded to each other;
- and further heating the assembly while maintaining it at a diffusion and solid-phase growth equilibrating temperature which is lower than the abnormal grain growth temperature--the temperature at which the abnormal grain growth of said polycrystal ceramic begins--and which is higher than said bonding temperature to thereby effect solid-phase growth of crystal.
The process for producing single-crystal ceramics characterized in that substantially the whole body of a polycrystal ceramic is kept below the abnormal grain growth temperature, and that in a polycrystal ceramic, in which the solid-phase growth is to take place, at least the portion of the polycrystal ceramic close to the interface of solid-phase growth between the single-crystal ceramic and polycrystal ceramic, is kept above said abnormal grain growth temperature.
Dependencies are inferred from the claim text.