US 4,871,977 AGranted

Monolithic integrated wideband power amplifier

AssigneeDeutsche ITT Industries GmbH

InventorsHarald Schilling, Bernd Novotny

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Abstract

A monolithic integrated wideband power amplifier circuit has a push-pull output stage, a driver stage, a difference stage which receives an input voltage signal and provides a difference signal, and the improvement of an operating point setter which receives the difference signal and controls the operating point of the circuit through a settable resistor. The setting of the operating point is independent of the gain of the output stage, and both are independent of temperature. The bipolar NPN transistors of the push-pull output stage consists of parallel-connected subtransistors which are arranged in the integrated circuit layout according to their characteristics and specific use, so as to minimize parasitic capacitances and resistances and to keep the upper cutoff frequency as high as possible.

Claims17

Dependent claims

A wideband power amplifier circuit comprising:

a supply-voltage source having first and second supply lines;
an output stage including first and second transistors connected in series in the same direction with a junction point provided as an output node in series between them, wherein a collector of the first transistor is coupled to the first supply line and the emitter of the second transistor is coupled to the second supply line;
a driver stage including a third transistor having its base connected by a common base lead to the base of the second transistor and its collector connected to the base of the first transistor;
a difference stage having input terminals to which an input voltage signal is applied and which provides an output difference signal;
and
an operating-point setter which is settable independently of the gain of the output stage and includes an intermediate node receiving the difference signal from the difference stage, a setting resistor connected between the first supply line and the intermediate node, a fourth transistor having its collector connected to the intermediate node in series with the setting resistor, its emitter connected to the second supply line, and its base connected to the common base lead, and a load-reducing transistor having its base connected to the intermediate node, its collector connected to the first supply line, and its emitter connected to the common base lead.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 07/265,198Filed 31 Oct 1988
Priority: EP 87117136.920 Nov 1987
Granted: 3 Oct 1989
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 84/615
Combinations of vertical BJTs and one or more of diodes, resistors or capacitors: combinations of vertical BJTs and one or more of resistors or…
H03F 3/3088
Two power transistors being controlled by the input signal: with asymmetric control, i.e. one control branch containing a supplementary phase…
H03F 3/45071
Differential amplifiers: with semiconductor devices only
H10D
Inorganic electric semiconductor devices