Voltage level shifting circuit
AssigneeVLSI Technology, Inc.
InventorPeter Cuevas
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AssigneeVLSI Technology, Inc.
InventorPeter Cuevas
Estimating the term…
In the present invention, a voltage level shifting circuit is disclosed. The voltage level shifting circuit comprises a first inventer and a second inverter with each inverter having a P-type MOS transistor and an N-type MOS transistor. Each of the inverters has an input port, an output port, a first voltage port and a second voltage port. The source of the P-type MOS transistor or N-type MOS transistor of each inverter is connected to the first voltage port. The voltage level shifting circuit also comprises two MOS transistors of the same conductivity type as the transistors of the inverter whose source is connected to the first voltage port. Each of the MOS transistors has a source, a drain and a gate with the drain connected to the first voltage port of each of the inverters. The sources of the first and second MOS transistors are connected together and to a high voltage level, such as V.sub.pp. Cross-coupling is provided by connecting the gate of the MOS transistor to the output port of the other inverter. The output is taken from the output port of the second inverter.
A voltage level shifting circuit for receiving an input signal, varying between a first voltage, and second voltage and producing an output signal, varying between said first voltage and a third voltage, said circuit comprising:
A voltage level shifting circuit for receiving an input signal, varying between a first voltage and a second voltage and producing an output signal, varying between said first voltage and a third voltage, said circuit comprising:
A voltage level shifting circuit for receiving an input signal, varying between a first voltage and a second voltage and producing an output signal, varying between said first voltage and a third voltage, said circuit comprising:
Dependencies are inferred from the claim text.