Method for depositing compound from group II-VI
AssigneeTexas Instruments Incorporated
InventorsJoseph D. Luttmer, Rudy L. York, Patricia B. Smith, Cecil J. Davis
Life of this patent
Estimating the term…
Abstract
A II-VI compound, such as zinc sulfide, is deposited from a gaseous mixture in a reactor which is compatible with a vacuum processing system which includes vacuum wafer transport. Two manifolds are used, each connected to a supply of one or more reagent gases, to improve uniformity.
Claims16
A method for depositing a compound from groups II and VI on a wafer comprising:
- (a) disposing said wafer in a process chamber within a process module at low pressure;
- (b) generating a remote plasma from an inert gas;
- (c) illuminating said remote plasma within said chamber with additional ultraviolet light produced within said module;
- (d) introducing an organometallic compound gas into said chamber and to a face of said wafer;
- and
- (e) introducing a sulfide containing gas into said chamber and to a face of said wafer.
The method for depositing a compound from groups II and VI on a wafer comprising:
- (a) disposing said wafer in a process chamber within a process module at low pressure;
- (b) generating a remote plasma from an inert gas;
- and
- (c) illuminating said remote plasma within said chamber with additional Ultraviolet light produced within said module;
- (d) introducing an organometallic II-VI compound gas into said chamber and to a face of said wafer;
- and
- (e) introducing a selenide containing gas into said chamber and to a face of said wafer.
A method for depositing a compound from groups II and VI on a inside a process chamber which is within a process module wafer comprising:
- (a) generating free radicals in a chamber remote from the process chamber from an inert gas;
- (b) introducing the free radicals into the process chamber;
- (c) illuminating the free radicals within the process chamber with ultraviolet light produced within the process module;
- (d) introducing an organometallic compound gas into the process chamber and to a face of the wafer;
- and
- (e) introducing a sulfide containing gas into the process chamber and to a face of the wafer.
A method for depositing a compound from groups II and VI on a wafer in a process chamber within a process module, comprising the steps of:
- (a) generating free radicals from an inert gas in a chamber remote from the process chamber;
- (b) illuminating said remote plasma within said chamber with ultraviolet light produced within the process module;
- (c) introducing an organometallic II-VI compound gas into the chamber and to a face of the wafer;
- and
- (d) introducing a selenide containing gas into the process chamber and to a face of the wafer.
Dependencies are inferred from the claim text.