Method for etching an aluminum film doped with silicon
AssigneeTexas Instruments Incorporated
InventorsCecil J. Davis, Lee M. Loewenstein, Rhett B. Jucha
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Abstract
A process for etch of Silicon doped Aluminum films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium, BCl.sub.3, and Cl.sub.2, and with the process chamber within the process module being generally at ambient temperatures.
Claims15
A process for etch of Aluminum film doped with Silicon comprising the steps of:
- (a) disposing said film in a low pressure process chamber;
- (b) generating remote plasma from a gas comprised of a mixture of Helium, BCl.sub.3, and Cl.sub.2;
- (c) introducing said remote plasma into said chamber and to said film;
- and
- (d) generating an in situ plasma with said chamber from a gas mixture of Helium, BCl.sub.3, and Cl.sub.2.
A process for etching an Aluminum film doped with Silicon comprising the steps of:
- (a) generating free radicals from a source of boron and a source of chlorine, in a plasma generating chamber remote from the process chamber;
- (b) introducing the free radicals into the process chamber;
- and
- (c) generating an in situ plasma from the free radicals.
The process as set forth in clim 7 wherein the process is carried out at 0.1 Torr.
The process as set forth in cliam 7 wherein the source of boron is BCl.sub.3.
Dependencies are inferred from the claim text.