Resistor integrated on a semiconductor substrate
AssigneeThomson-CSF
InventorBruno Nadd
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Abstract
The invention provides a resistor integrated on a semiconductor substrate and capable of withstanding high voltages. The integrated resistor is formed by a well of the opposite conductivity type relative to that of the substrate and is in the form of a ribbon wound about one of its ends which is connected electrically to a conducting pole. The conducting pole provides the electric connection of the ribbon with the rear face of the substrate and through this substrate.
Claims4
A resistor integrated on a semiconductor substrate of a first conductivity type having a first face and a second face and connected between a terminal on the first face and a metallization on the second face, the resistor comprising:
- a first region of a second conductivity type formed into the substrate from said first face, said first region including at least a spiral-shaped portion;
- a second highly doped region of the first conductivity type being formed at the center of the spiral-shaped portion of the first region and contacting the substrate, and
- a conductive stud formed on said first face connecting the second region with an inner portion of the spiral-shaped portion of the first region;
- wherein said terminal comprises an outer portion of the spiral-shaped portion of the first region.
Dependencies are inferred from the claim text.