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US 4,792,837 AGranted
Orthogonal bipolar transistor
AssigneeGE Solid State Patents, Inc.
InventorVictor Zazzu
Life of this patent
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Abstract
An orthogonal bipolar transistor structure is disclosed which is particularly suitable for formation in relatively thin epitaxial layers on insulating substrates. The emitter of the transistor is disposed directly over the base region while a collector region may be arranged on one side of or surrounding the base region. Alternatively, the collector region may be a pair of regions disposed laterally on opposite sides of the base region.
Claims7
An orthogonal bipolar transistor comprising:
- (a) a thin first layer of single crystalline silicon having a substantially planar surface, a first region of a first conductivity type, extending from said surface, and a second region of a second conductivity type extending from said surface contiguous with said first region so as to form a PN junction that extends to said surface;
- and
- (b) a second layer of silicon of said second conductivity type on said surface and arranged to form a PN junction with only said first region, said PN junction being spaced from said second region
- (c) an emitter electrode contact to the second layer;
- (d) a base electrode contact to the first region of the first layer;
- and
- (e) a collector electrode contact to the second region of the first layer.
4 more elements
Dependencies are inferred from the claim text.