Method of producing ferroelectric thin film
AssigneesMasaru Okada, Horiba, Ltd.
InventorsMasaru Okada, Katsuhiko Tomita
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Abstract
Method of producing a ferroelectric thin film by chemical vapor deposition, by providing a gaseous mixture containing oxygen and a gaseous raw material containing (A) alkyl lead and or alkyl bismuth together with an alcoholate of titanium, zirconium, silicon, germanium or niobium, (B) alkyl lead and alkyl germanium, or (C) alkyl bismuth and alkyl lead, and reacting the oxygen and gaseous raw material to oxidize the components of (A), (B) or (C), to form the thin film on the substrate.
Claims7
A method of producing a ferroelectric film by chemical vapor deposition, which comprises:
- providing a gaseous mixture containing oxygen and a gaseous raw material selected from the group consisting of (A), (B) and (C), wherein (A) is at least one member selected from the group consisting of alkyl lead and alkyl bismuth, and at least one member selected from the group consisting of alcoholates of titanium, zirconium, silicon, germanium and niobium, (B) is alkyl lead and alkyl germanium, and (C) is alkyl bismuth and alkyl lead, said oxygen being present in said gaseous mixture in an amount which is at least sufficient to oxidize the components of said (A), (B) or (C);
- and
- reacting said oxygen and gaseous raw material at a pressure of not more than about atmospheric pressure on a substrate having a temperature which is at least sufficient to oxidize the components of said (A), (B) or (C), to form on said substrate a film, having a thickness of 1 to 30 .mu.m, selected from the group consisting of PbTiO.sub.3, PbZrO.sub.3, PbZrTiO.sub.3, Pb.sub.5 Ge.sub.3 O.sub.11, Bi.sub.12 TiO.sub.20, Bi.sub.12 PbO.sub.19, Bi.sub.12 SiO.sub.20, Bi.sub.12 GeO.sub.20, Pb.sub.2 Bi.sub.4 Ti.sub.5 O.sub.18 and PbBi.sub.2 Nb.sub.2 O.sub.9.
A method of producing a ferroelectric film by chemical vapor deposition, which comprises:
- providing a gaseous raw materials selected from the group consisting of (A), (B) and (C), wherein (A) is at least one member selected from the group consisting of alkyl lead and alkyl bismuth, and at least one member selected from the group consisting of alcoholates of titanium, zirconium, silicon, germanium and niobium, (B) is alkyl lead and alkyl germanium, and (C) is alkyl bismuth and alkyl lead;
- introducing said gaseous raw material into a mixing chamber by means of an inert carrier gas;
- mixing said gaseous raw material with oxygen in said mixing chamber to provide a gaseous mixture, said oxygen being present in said gaseous mixture in an amount which is at least sufficient to oxidize the component of said (A), (B) or (C);
- and
- reacting said oxygen and gaseous raw material at a pressure of not more than about atmospheric pressure on a substrate having a temperature which is at least sufficient to oxidize the components of said (A), (B) or (C), to form on said substrate a film, having a thickness of 1 to 30 .mu.m, selected from the group consisting of PbTiO.sub.3, PbZrO.sub.3, PbZrTiO.sub.3, Pb.sub.5 Ge.sub.3 O.sub.11, Bi.sub.12 TiO.sub.20, Bi.sub.12 PbO.sub.19, Bi.sub.12 SiO.sub.20, Bi.sub.12 GeO.sub.20, Pb.sub.2 Bi.sub.4 Ti.sub.5 O.sub.18 and PbBi.sub.2 Nb.sub.2 O.sub.9.
Dependencies are inferred from the claim text.