Reverse conducting gate turn-off thyristor device
AssigneeKabushiki Kaisha Toshiba
InventorsTakashi Shinohe, Katsuhiko Takigami, Hiromichi Ohashi, Tsuneo Ogura, Masayuki Asaka
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Abstract
A reverse conducting gate turn-off thyristor device in which a gate turn-off thyristor and a reverse conduction diode are integrally formed in the same semiconductor wafer is constituted in such a manner that a part of a gate electrode is arranged in an isolation region that is sandwiched by the gate turn-off thyristor section and the reverse conduction diode section.
Claims7
A reverse conducting gate turnoff thyristor device comprising:
- a semiconductor wafer;
- a gate turn-off thyristor section formed in said semiconductor wafer having a gate electrode and constituting a gate turn-off thyristor;
- a reverse conduction diode section formed in said semiconductor wafer and near said gate turn-off thyristor and constituting a diode connected in antiparallel with said gate turn-off thyristor section;
- an isolation region which is a p-type layer formed in a region that is sandwiched by said gate turn-off thyristor section and said reverse conduction diode section in said semiconductor wafer;
- separating means formed by one of a groove and an n-type region provided in said p-type layer of said isolation region;
- and
- an insulation film is formed on said, separating means said gate electrode extending over said insulation film.
A reverse conducting gate turn-off thyristor device comprising:
- a semiconductor wafer;
- a gate-turn-off thyristor section formed in said semiconductor wafer, having a p-type base layer and gate electrode, and constituting a gate turn-off thyristor;
- a reverse conduction diode section formed in said semiconductor wafer and near said gate turn-off thyristor, having p-type anode layer connected with said p-type base layer of said gate turn-off thryistor section, and constituting a diode connected in anti-parallel with said gate turn-off thyristor section;
- an isolation region which is a p-type layer and formed in a region that is sandwiched by said gate turn-off thyristor section and said reverse conduction diode section in said semiconductor wafer;
- separating means comprising one of a groove and an n-type region provided in said p-type layer of said isolation region, for separating said p-type base layer of said gate turn-off thyristor section from said p-type anode layer of said reverse conduction diode;
- and
- an insulation film formed on said separating means, said gate electrode extending over said insulation film.
A reverse conducting gate turn-off thyristor device in which a gate turn-off thyristor having a plurality of cathode regions radially extending and a reverse conduction diode are integrally formed in the same semiconductor wafer, wherein a separating means is provided in an isolation region that is sandwiched by a gate turn-off thyristor section and a reverse conduction diode section, said isolation region being a p-type layer, and said separating means being formed by one of a groove and an n-type region provided in said p-type layer, and an insulation film is formed on said separating means, and a gate electrode of said gate turn-off thyristor section extends over said insulation film.
Dependencies are inferred from the claim text.