Field effect transistor type semiconductor sensor and method of manufacturing the same

A semiconductor sensor comprising:

• a first semiconductor substrate of a first conductivity type having one surface and an opposite surface;
• a second semiconductor substrate of the first conductivity type having one surface and an opposite surface and a through hole extending from the one surface to the opposite surface thereof, the one surface being placed in contact with that of said first semiconductor substrate and said first and second semiconductor substrates being directly bonded together;
• source and drain regions formed by diffusing an impurity of a second conductivity type in the one surface of said second semiconductor substrate, separated by said through hole, and extending along the one surface of said second semiconductor substrate which is in contact with said first semiconductor substrate;
• and
• a first insulative layer formed on the opposite surface of said second semiconductor substrate, an inner surface of said through hole, and the one surface of said first semiconductor substrate exposed in said through hole.

A semiconductor sensor comprising:

• a first semiconductor substrate of a first conductivity type having one surface and an opposite surface;
• a second semiconductor substrate on said opposite surface having one surface and an opposite surface, and a through hole extending from the one surface to the opposite surface;
• a first insulative layer formed on at least the one surfaces of said first and second semiconductor substrates, the one surfaces being in contact with each other, and said first and second semiconductor substrates being bonded together through said first insulative layer;
• source and drain region formed on said first semiconductor substrate by diffusing an impurity of the second conductivity type, and separated from each other on the one surface of said first semiconductor substrate exposed in said through hole;
• and
• a second insulative layer formed on the opposite surface of said second semiconductor substrate, an inner surface of said through hole, and the one surface of said first semiconductor substrate exposed in said through hole.