Method for making a complementary device containing MODFET

A method for making a device comprising a complementary structure, said structure comprising an n-channel field effect transistor and a p-channel MODFET on a common substrate, said method comprising

• (i) a sequence of steps comprising semiconductor layer formation on said substrate, resulting in superposed n-channel field effect transistor and p-channel MODFET layer structures,
• (ii) a step comprising removal of selected portions of the last-deposited semiconductor layer so as to result in adjacent at least one first surface region and at least one second surface region, said first surface region being an n-channel field effect transistor region and said second surface region being a p-channel MODFET transistor region, and
• (iii) a step comprising the deposition of respective first and second source, gate, and drain contacts on said first surface region and on said second surface region, and interconnection of at least one of said first contacts to at least one of said second contacts,
• said method being characterized in that said sequence of steps comprises all the steps of semiconductor layer formation in making said device.