Method of manufacturing a semiconductor device, in which a metallization with a thick connection electrode is provided on a semiconductor body

A method of manufacturing a semiconductor device comprising the steps of

• forming a semiconductor body having respective transistor zones,
• forming an insulating layer on said semiconductor body, said insulating layer having openings to at least some of said transistor zones,
• successively forming at least three metal layers on said insulating layer, said at least three metal layers including a first thin metal layer, a second thick metal layer, and a third thin metal layer formed between said first thin metal layer and said second thick metal layer,
• Wherein said second thick metal layer is formed with a thickness ranging from about 30 to 60 .mu.m, said first thin metal layer is formed with a thickness ranging from about 3-6 .mu.m, and said third thin metal layer is formed with a thickness ranging from about 0.1-0.3 .mu.m,
• forming a masking layer on parts of said second thick metal layer,
• etching said second thick metal layer at unmarked parts to said third thin metal layer, said third thin metal layer acting on an etching stopper,
• forming a second masking layer on parts of said third thin metal layer and remaining parts of said second thick metal layer,
• etching exposed parts of said third thin metal layer and underlying parts of said first thin metal layer,
• forming a second insulating layer over the entire structure, and
• etching at least a part of said second insulating layer on said second thick metal layer to form a thick connection electrode.