Method for selective surface treatment of semiconductor structures
AssigneeNorth American Philips Corporation, Signetics Division
InventorMark A. Davis
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Abstract
Surface features of a semiconductor structure above a predetermined level are exposed for selective treatment (e.g., etching) by forming a layer of a solvent-expanded polymer on the surface of the structure, and allowing the layer to dry and cure, thereby relaxing to the predetermined level, at which it protects the underlying structure during treatment. Subsequently, the protective layer is removed by rinsing in a solvent.
Claims21
A method for the selective treatment of surface features of a semiconductor structure on a planar substrate, the features lying above a predetermined vertical level in the structure, the method comprising:
- (a) covering the surface of the structure, including the features to be treated, with a continuous layer of a solvent-expanded, relaxable, room temperature curing polymer composition, to a level above the predetermined level by an amount sufficient to result in the upper surface of the layer dropping to the predetermined level upon drying and curing of the layer;
- (b) allowing the solvent-expanded layer to dry and cure, thereby relaxing and decreasing in volume, causing the upper surface of the layer to drop to the predetermined level, and causing the layer to withdraw from surface features lying above the predetermined level, thus exposing the surface features for treatment;
- (c) treating the exposed surface features;
- and
- (d) removing the polymer layer from the structure.
Dependencies are inferred from the claim text.