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US 4,788,163 AGranted
Devitrifying glass frits
AssigneeGeneral Electric Company
InventorsKenneth W. Hang, Ashok N. Prabhu
Life of this patent
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Abstract
A novel devitrifying frit is disclosed which has a coefficient of expansion essentially the same as that of silicon. The subject frits have a high softening temperature and excellent reheat stability which make them useful in ink formulations for forming dielectric layers in multilayer circuitry. The frits are also suitable for use as a substrate material for direct mounting of silicon chips or for use in thick film via-fill inks.
Claims8
A devitrifying glass frit comprising, on a weight basis:
- from about 19 to about 25 percent of zinc oxide;
- from about 5 to about 20 percent of barium oxide;
- from about 10 to about 30 percent of aluminum oxide;
- from about 30 to about 50 percent of silicon dioxide;
- from about 1 to about 6 percent of magnesium oxide, calcium oxide or mixtures thereof;
- from about 0.5 to about 3 percent of phosphorus pentoxide;
- and
- from about 1 to about 6 percent of zirconium silicate.
5 more elements
A fused body consisting essentially of, on a weight basis:
- (a) from about 65 to about 100 percent, devitrifying glass frit cosisting essentially of, on a weight basis:
- from about 19 to about 25 percent zinc oxide;
- from about 5 to about 20 percent barium oxide;
- from about 10 to about 30 percent aluminum oxide;
- from about 30 to about 50 percent silicon dioxide;
- from about 1 to about 6 percent of magnesium oxide, calcium oxide or mixtures thereof;
- from about 0.5 to about 3 percent of phosphorus pentoxide;
- from about 1 to about 6 zirconium silicate;
- and
- (b) up to about 35 percent of a suitable ceramic filler.
7 more elements
Dependencies are inferred from the claim text.