Subchannel doping to reduce short-gate effects in field effect transistors
AssigneeMicrowave Technology, Inc.
InventorsEdward B. Stoneham, Masahiro Omori, Arthur D. Herbig
Life of this patent
Estimating the term…
Abstract
One embodiment of a process in accordance with our invention includes the step of forming a P type region on a semiconductor substrate. After the P type region is formed, an N type layer is epitaxially grown on the P type region. A Schottky gate is then formed on the N type epitaxial layer. A first portion of the epitaxial layer serves as a transistor source, a second portion of the epitaxial layer serves as the transistor drain, and a third portion of the epitaxial layer serves as the channel. Of importance, the P type semiconductor region helps prevent various short channel effects caused when current carriers flowing between the source and drain flow too far from the Schottky gate.
Claims12
A method for manufacturing a transistor comprising the steps of:
- providing a first region of semiconductor material of a first conductivity type;
- depositing a second semiconductor region of a second conductivity type on said first region after said step of providing said first region;
- and
- forming a gate on said second semiconductor region, a first portion of said second semiconductor region serving as a source of said transistor, a second portion of said second semiconductor region serving as a drain of said transistor, wherein the presence of said first region limits the distance from said gate that current carriers flow when traveling between said source and said drain.
A method for manufacturing a transistor, said transistor comprising a source and drain, said method comprising the steps of:
- providing a first region of semiconductor material of a first conductivity type;
- depositing a second semiconductor region on said first region after said step of providing said first region;
- and
- forming a gate on said second semiconductor region, at least a portion of said second semiconductor region serving as a channel, wherein the presence of said first region limits the distance from said gate that current carriers flow when traveling between said source and said drain past said gate.
Dependencies are inferred from the claim text.