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US 4,786,957 AGranted
Negative differential resistance element
AssigneeDirector-General of Agency of Industrial Science and Technology
InventorShunichi Muto
Life of this patent
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Abstract
A negative differential resistance element, the characteristics of which can be modulated externally, is provided by a sequential arrangement of an n-type GaAs emitter layer, a non-doped AlGaAs first barrier layer, an n-type GaAs base layer, a second barrier layer of a superlattice composed of coupled non-doped AlAs and GaAs thin layers, and an n-type collector layer. The conductivity of the emitter, base, and collector layers may be changed to p-type.
Claims7
A negative differential resistance element, comprising
- a GaAs emitter layer of one conductivity type;
- a first barrier layer of non-doped AlGaAs in contact with the emitter layer;
- a GaAs base layer of the one conductivity type in contact with the first barrier layer on the opposite side of the emitter layer;
- a second barrier layer of a superlattice composed of a plurality of coupled non-doped AlAs and GaAs thin layers in contact with the base layer on the opposite side of the first barrier layer;
- a GaAs collector layer of the one conductivity type in contact with the second barrier layer on the opposite side of the base layer;
- an emitter electrode connected to the emitter layer;
- a base electrode connected to the base layer;
- a collector electrode connected to the collector layer;
- and,
- means for biasing the element so that a carrier of said one conductivity type flows from the emitter layer to the collector layer via the base layer.
7 more elements
Dependencies are inferred from the claim text.