Semiconductor device with source and drain depth extenders and a method of making the same
AssigneeGeneral Electric Company
InventorsDora Plus, Ronald K. Smeltzer
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Abstract
A semiconductor device having a layer of semiconductor material disposed on an insulating substrate is disclosed. Source and drain depth extenders are provided within the semiconductor material for extending the respective source and drain regions to the insulating substrate. This device is fabricated in a manner which minimizes damage to the gate oxide layer that often occurs when high energy implants are used to form self-aligned source and drain regions.
Claims8
A semiconductor device, comprising:
- an insulating substrate;
- a layer of semiconductor material disposed on said insulating substrate;
- source and drain depth extenders of a first conductivity type disposed within said layer of semiconductor material so that at least a portion of each of said extenders has a common boundary with said insulating substrate;
- and
- source and drain regions of a first conductivity type disposed within said layer of semiconductor material so that each of said source and drain depth extenders subtend and contact the respective source and drain regions, said source and drain regions each having an impurity concentration which is greater than the impurity concentration of the respective source and drain depth extenders and a depth which is less than the thickness of said layer of semiconductor material.
In a complimentary metal-oxide-semiconductor device including an insulating substrate, a layer of semiconductor material disposed on said insulating substrate, a P-channel metal-oxide-semiconductor transistor disposed in a first predetermined portion of said layer and an N-channel metal-oxide-semiconductor transistor disposed in a second predetermined portion of said layer, the improvement comprising:
- P-type source and drain depth extenders for said P-channel transistor disposed within said first predetermined portion of said layer so that at least a portion of each of said extenders has a common boundary with said insulating substrate;
- N-type source and drain depth extenders for said N-channel transistor disposed within said second predetermined portion of said layer so that at least a portion of each of said extenders has a common boundary with said insulating substrate;
- P-type source and drain regions disposed within said first predetermined portion of said layer so that each of said P-type source and drain depth extenders subtend and contact the respective P-type source and drain regions, said P-type source and drain regions each having an impurity concentration which is greater than the impurity concentration of the respective P-type source and drain depth extenders and a depth which is less than the thickness of said layer of semiconductor material;
- and
- N-type source and drain regions disposed within said second predetermined portion of said layer so that each of said N-type source and drain depth extenders subtend and contact the respective N-type source and drain regions, said N-type source and drain regions each having an impurity concentration which is greater than the impurity concentration of the respective N-type source and drain depth extenders and a depth which is less than the thickness of said layer of semiconductor material.
Dependencies are inferred from the claim text.