Photon assisted tunneling testing of passivated integrated circuits

An integrated circuit process intermediate chip-to-test having enhanced susceptibility to non-contact dynamic photon assisted tunneling testing, having a multiplicity of operational circuits of which a testable plurality of such circuits are arrayed on a surface under a passivation layer comprising:

• a plurality of conductive test sites associated with such circuits, at identifiable locations accessible by photons;
• a transparent conductive overlayer disposed on said passivation layer, said overlayer comprising test output connecting means, when such chip-to-test is mounted for exercise in a test operational mode to generate operational parameters at the test sites, the test sites are photon accessed during exercise, and photon assisted tunneling values related to the operational parameters are measured from said transparent conductive overlayer;
• at least one input-output contact designated for test connection;
• and connection means connecting said contact to said transparent conductive overlayer.

A testing method for an integrated circuit chip-to-test comprising the steps of:

• (a) providing a chip-to-test covered with a passivation layer with a plurality of test sites at identifiable locations accessible by photons, the passification layer being selected of material which is photon, transmissive and susceptible to photon assisted tunneling and dimensioned for photon assisted tunneling;
• (b) adding a thin conductive overlayer over the passivation layer, said overlayer being metallic or otherwise electrically conductive while being penetrable by photons;
• (c) coupling chip-to-test exercise means to the chip-to-test to cause electrical activity in the chip-to-test thereby generating voltages at the test sites which differ for proper and faulty operation of the chip-to-test;
• (d) coupling laser means for transmitting photons to a selected test site on the chip-to-test to excite photoemission at the test site commensurate with the voltage at the test site, and
• (e) coupling current measurement means to said overlayer to measure the photon assisted tunneling electron current which is a composite function of the photon excited photoemission at the test site and voltage at the test site, whereby the selected test site provides to said current measurement means different measures for proper operation and faulty operation of the chip-to-test so that contactless testing of the chip-to-test is achieved.

A testing method for an integrated circuit chip-to-test comprising the steps of:

• (a) providing a chip-to-test covered with a passivation layer with a plurality of test sites at identifiable locations accessible by photons, the passivation layer being selected of material which is photon transmissive and susceptible to photon assisted tunneling and dimensioned for photon assisted tunneling;
• (b) adding a thin conductive overlayer over the passivation layer, said overlayer being metallic or otherwise electrically conductive while being penetrable by photons;
• (c) coupling bias means to said overlayer for controlling the photon assisted tunneling;
• (d) coupling chip-to-test exercise means to the chip-to-rest to cause electrical activity in the chip-to-test thereby generating voltages at the test sites which differ for proper and faulty operation of the chip-to-test;
• (e) coupling laser means for transmitting photons to a selected test site on the chip-to-test to excite photoemission at the test site commensurate with the voltage at the test site, and
• (f) coupling current measurement means to said overlayer to measure photon assisted tunneling electron current which is a composite function of the photon excited photoemission at the test site and the voltage at the test site, whereby the selected test site provides to said current measurement means different measures for proper operation and faulty operation fo the chip-to-test so that contactless testing of the chip-to-test is achieved.

A testing method for an integrated circuit chip-to-test comprising the steps of:

• (a) providing a chip-to-test covered with a passivation layer with a plurality of test sites at identifiable locations accessible by photons, the passivation layer being selected of material which is photon transmissive and susceptible to photon assisted tunneling and dimensioned for photon assisted tunneling;
• (b) adding a thin conductive overlayer over the passivation layer, said overlayer being metallic or otherwise electrically conductive while being penetrable by photons;
• (c) coupling chip-to-test exercise means to the chip-to-test to cause electrical activity in the chip-to-test thereby generating voltages at the test sites which differ for proper and faulty operation of the chip-to-test;
• (d) coupling laser means for transmitting photons to a selected test site on the chip-to-test to excite photoemission at the test site commensurate with the voltage at the test site;
• (e) coupling current measurement means to said overlayer to measure photon assisted tunneling electron current which is a composite function of the photon excited photoemission at the test site and the voltage at the test site, whereby the selected test site provides to said current measurement means different measures for proper operation and faulty operation of the chip-to-test, and
• (f) removing said overlayer after testing is completed.