Method for developing poly(methacrylic anhydride) resists

Abstract

The present invention relates to a process for forming an image with a positive resist, said process involves the steps of forming on a substrate a positive resist layer of poly(methacrylic anhydride). The resist layer baked at a temperature of 200.degree. C. to 350.degree. C. and thereafter irradiated with a pedetermined pattern of ionizing radiation. The irradiated area is then developed utilizing a developer solvent that is composed of solution of a base selected from the group consisting of alkali metal hydrozides, ammonium hydroxides (including quarternary ammonium hydroxides), alkali metal alkoxides and alkali metal carbonates; and a hydroxylic solvent selected from the group consisting of branched or straight chain alcohols having a C.sub.1 -C.sub.12 carbon content and water or mixtures thereof; and rinsing the resist with the same solvent selected above.

Dependencies are inferred from the claim text.