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US 4,751,197 AGranted
Make-link programming of semiconductor devices using laser enhanced thermal breakdown of insulator
AssigneeTexas Instruments Incorporated
InventorKendall S. Wills
Life of this patent
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Abstract
A semiconductor device is programmed by a laser beam which causes an insulator between two conductors on a silicon substrate to be permanently altered, as by breakdown of the insulator. The conductors may be metals such as aluminum or tungsten, and the insulator is a layer of deposited or thermal silicon oxide. The breakdown may be enhanced by voltage applied between the conductors while the laser beam is focused on the structure.
Claims3
A method of making a laser beam programmable semiconductor device, comprising the steps of:
- forming a conductive region in a semiconductor body at a face thereof;
- forming an insulative coating on said face of said semiconductor body overlaying a portion of said conductive region;
- opening a steep-walled hole in said insulative coating so as to expose said conductive region at the bottom thereof;
- forming a conformal coating of polycrystalline silicon covering the sides and bottom of said steep-walled hole;
- forming a conductive layer overlaying said insulative coating and said coating of polycrystalline silicon;
- and
- exposing the area of said conductive layer overlaying said steep-walled hole to a laser beam;
- wherein said polycrystalline silicon is rendered conductive by said laser beam to create a conductive path between said conductive region and said conductive layer.
5 more elements
Dependencies are inferred from the claim text.