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US 4,736,104 AGranted
Selenidization passivation
AssigneeTexas Instruments Incorporated
InventorsTowfik H. Teherani, D. Dawn Little
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Abstract
A method of passivation of Hg.sub.1-x Cd.sub.x Te by anodic selenidization is disclosed; in preferred embodiments the selenidization is by anodic growing of the selenides in an electrolyte solution of sodium selenide in water and ethylene glycol or in a solution of sodium selenide plus sodium hydroxide in water and ethylene glycol. Also, infrared detectors incorporating such selenide passivated Hg.sub.1-x Cd.sub.x Te are disclosed.
Claims5
A passivated Hg.sub.1-x Cd.sub.x Te substrate, comprising:
- (a) a Hg.sub.1-x Cd.sub.x Te substrate;
- and
- (b) a layer of selenide on a surface of said substrate and formed with components of said Hg.sub.1-x Cd.sub.x Te.
A semiconductor infrared detector, comprising:
- (a) Hg.sub.1-x Cd.sub.x Te photosensitive regions;
- (b) a passivation layer on said Hg.sub.1-x Cd.sub.x Te, said layer primarily cadmium selenide;
- and
- (c) gates and interconnections for said regions for detecting photogenerated charge in said Hg.sub.1-x Cd.sub.x Te.
1 more element
Dependencies are inferred from the claim text.