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US 4,735,920 AGranted
Method for structuring silicon carbide
AssigneeSiemens Aktiengesellschaft
InventorsDietrich Stephani, Peter Lanig, Guenther Ziegler
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Abstract
A method for structuring silicon carbide by photolithography and plasma etching wherein a substrate of silicon carbide is covered on a flat side with a structured silicon layer, and the plasma etching is then carried out with a gaseous mixture of a halogenated hydrocarbon and oxygen, the oxygen being present in an amount of at least 40% and preferably 70 to 95% by volume.
Claims6
A method of structuring silicon carbide which comprises:
- providing a planar substrate of silicon carbide,
- covering one flat surface of said substrate with a layer of silicon,
- etching said layer of silicon to provide a structured silicon mask, and
- plasma etching the underlying substrate through said structured silicon mask employing a gaseous mixture of a halogenated hydrocarbon and oxygen, said oxygen constituting at least 40% by volume of said mixture whereby said substrate of silicon carbide is etched more rapidly than said structured silicon mask.
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A method of structuring a silicon carbide substrate which comprises:
- applying a layer of silicon over said substrate,
- applying a resist mask over said substrate,
- plasma etching said substrate through said mask using a mixture of carbon tetrafluoride and oxygen containing not more than 30% by volume oxygen to reproduce the pattern of said resist mask in a silcon mask and,
- thereafter plasma etching the substrate through said silicon mask with a mixture of carbon tetrafluoride and oxygen containing at least 40% by volume oxygen.
1 more element
Dependencies are inferred from the claim text.