Dielectric thin film
AssigneeSony Corporation
InventorsMasaki Saito, Toshio Mori
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Abstract
A high dielectric constant capacitor comprising a thin film deposited on a substrate, the thin film being composed of a mixture of a tantalum oxide and a titanium oxide wherein the ratio of Ti to Ta is in the range from 0.1 to 4 atomic percent.
Claims6
A high dielectric constant capacitor comprising a substrate and a thin film formed on said substrate said thin film consisting essentially of a mixture of a tantalum oxide and a titanium oxide in which the ratio of Ti to Ta is in the range from 0.1 to 4 atomic percent, said thin film being produced by chemical vapor deposition and decomposition of a tantalum alkoxide and a titanium alkoxide.
The method of forming a high dielectric constant capacitor which comprises depositing on a substrate a thin film of a tantalum oxide and a titanium oxide by chemical vapor deposition, said thin film having a ratio of Ti to Ta in the range from 0.1 to 4 atomic percent.
Dependencies are inferred from the claim text.