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US 4,734,267 AGranted
Apparatus for growing compound semiconductor single crystals
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorMasakatu Kojima
Life of this patent
Estimating the term…
Abstract
An apparatus for growing compound semiconductor single crystals includes a collector which removes the excess amount of melt B.sub.2 O.sub.3 from the crucible containing melt GaP and melt B.sub.2 O.sub.3. The collector moves up and down independently with reference to the shaft used in pulling the single crystals from the crucible.
Claims5
An apparatus for growing compound semiconductor single crystals comprising:
- a crucible for containing compound semiconductor melt and inert material which does not react to the compound semiconductor melt and which is of a sufficient quantity to cover the surface of the compound semiconductor melt in order to prevent the latter from decomposition and vaporization;
- means for heating the crucible;
- means for pulling single crystals from the compound semiconductor melt, said pulling means designed to have a seed crystal attached thereto to initiate crystal growth;
- means mounted for movement independent of movement of said means for pulling single crystals for collecting a portion of melted inert material through movement into contact therewith to permit the single crystal growth yet not uncover the surface of the compound semiconductor melt;
- and
- a high-pressure housing in which the apparatus structural elements are contained and which is designed to be filled with inert gas under high pressure.
3 more elements
Dependencies are inferred from the claim text.