Pattern defect inspection apparatus

A pattern defect inspection apparatus for inspecting a pattern defect by detecting reflected diffraction lights generated by scanning a surface of a semiconductor wafer having a substantially straight edge pattern or an integrated circuit formed thereon by a coherent light beam having a predetermined spot size directed normally to the surface of the semiconductor wafer, in which the directions of said straight edge of said pattern include directions of 0.degree., 45.degree., 90.degree. and 135.degree. with respect to a reference direction, and two straight edges crossing each other provide a rounded corner due to fabrication limitations, said corner generating weaker reflected diffraction lights than those from said straight edge, comprising:

• normal direction signal detection means including a plurality of photo-detectors having wide light receiving areas arranged in a plurality of spatial areas in normal directions, for converting the reflected diffraction lights generated from said pattern and received by said photo-detectors into normal direction signals, said normal directions including directions of 0.degree., 45.degree., 90.degree. and 135.degree.;
• abnormal direction signal detection means including photo-detectors having wide light receiving areas arranged in a plurality of spatial areas in abnormal directions, for converting the reflected diffraction lights generated form said pattern and received said photo-detectors into abnormal signals, said abnormal directions including directions of 22.5.degree., 67.5.degree., 112.5.degree. and 157.5.degree.;
• and
• defect discrimination means for determining if the abnormal direction signal is due to a defect or not in accordance with the normal and abnormal direction signals from said abnormal direction signal detection means and said normal pattern detection means, including first compare means for comparing a sum of the abnormal direction signals with a threshold, first selection means for selecting a second signal of a predetermined magnitude order from the abnormal direction signals and second selection means for selecting a second signal of a predetermined magnitude order from the normal direction signals, and second compare means, including means for multiplying said second signal by a predetermined factor, for comparing said multiplied second signal with said first signal.

A pattern defect inspection apparatus for detecting a defect on a substantially straight edge pattern formed on a semiconductor wafer by scanning the semiconductor wafer by a coherent light beam, detecting reflected diffraction lights from said pattern, and detecting a change in the reflected diffraction lights due to disturbance in regularity of the pattern, in which the directions of said edge include 0.degree., 45.degree., 90.degree. and 135.degree. with respect to a reference direction, comprising:

• detectors for detecting normal direction signals from said pattern, said normal direction signals being generated by the reflected diffraction lights in a plurality of directions including directions of 0.degree., 45.degree., 90.degree. and 135.degree. in which the reflected diffraction light intensities are high because of said straight edge of said pattern;
• detectors for detecting abnormal direction signals from said pattern, said abnormal direction signals being generated by the reflected diffraction lights in a plurality of directions including directions of 22.5.degree., 67.5.degree., 112.5.degree. and 157.5.degree., generated by a disturbance in the regularity of said pattern;
• pattern major-classifying signal generating means for major-classifying said pattern into one of a plurality of major classes in accordance with high level signals, generated by edges of the pattern, of the detected normal direction signals;
• pattern sub-classifying signal generating means for sub-classifying the major-classified normal patterns into a plurality of sub-classes in accordance with low level signals generated by a predetermined deviation from an ideal pattern, of the detected normal direction signals;
• abnormal signal detection means including a floating threshold circuit for extracting abnormal signals from the detected abnormal direction signals;
• a plurality of normal/abnormal discriminiators one for each of the classified patterns for determining if the detected abnormal signal is due to the defect in the pattern or not;
• and
• selection means for selecting said normal/abnormal discriminators suitable for the pattern in accordance with the major-classifying signal and the sub-classifying signal.

A pattern defect inspection apparatus for scanning a pattern formed on a semiconductor wafer by a converged coherent light beam and detecting reflected diffraction lights from the pattern by photo-detectors arranged in a plurality of directions in which the reflected diffraction lights are generated by a disturbance in regularity of the pattern, comprising:

• a circuit for summing signals in all of said directions, comparing the sum with a threshold and detecting a pattern defect if the sum is larger than the threshold;
• a circuit for selecting a signal or a predetermined magnitude order of the signals in the plurality of directions in which the reflected diffraction lights have high intensities because of the regularity of the pattern;
• a circuit for selecting a signal of a predetermined magnitude order of the signals in the plurality of directions in which the reflected diffraction lights from the pattern are generated by the disturbance in the regularity of the pattern;
• and
• a circuit for processing said two selected signals and comparing the processed signals to determine the presence or absence of the defect.

A pattern defect inspection apparatus for scanning a pattern formed on a semiconductor wafer by a light beam of a predetermined spot size and detecting a defect on the pattern in accordance with reflected diffraction lights from the pattern, comprising:

• first photo-detection means arranged in first plurality of directions in which the reflected diffraction lights are generated when a plurality of defect-free basic patterns are irradiated by said light beam, said first photo-detection means converting the reflected diffraction lights to first electrical signals;
• second photo-detection means arranged in second plurality of directions in which the reflected diffraction lights are generated when a plurality of defective basic patterns are irradiated by said light beam, said second photo-detection means concerning the reflected diffraction lights to second electrical signals;
• and
• discrimination means for determining presence or absence of the defect on the pattern of the semiconductor wafer under inspection in accordance with the signals from said first and second photo-detection means, means for classifying the pattern on said semiconductor wafer to one of said basic patterns based on said first electrical signals and producing a select signal in accordance with the classification, means for detecting a defect signal representative of a defect size of the defective pattern based on said second electrical signals, second discrimination means one for each of the basic patterns for determining the presence or absence of the defect, means for setting thresholds corresonding to allowable defect sizes of the related basic patterns, means for comparing the defect signal with the thresholds, and selection means for selectively activating the second discrimination means corresponding to the selection signal.

A pattern defect inspection apparatus for scanning a pattern formed on a semiconductor wafer by a light beam of a predetermined spot size and detecting a defect on the pattern in accordance with reflected diffraction lights from the pattern, comprising:

• first photo-detection means arranged in first plurality of directions in which the reflected diffraction lights are generated when a plurality of defect-free basic patterns are irradiated by said light beam, said first photo-detection means converting the reflected diffraction lights to first electrical signals;
• second photo-detection means arranged in second plurality of directions in which the reflected diffraction lights are generated when a plurality of defective basic patterns are irradiated by said light beam, said second photo-detection means concerning the reflected diffraction lights to second electrical signals;
• and
• discrimination means for determining presence or absence of the defect on the pattern of the semiconductor wafer under inspection in accordance with the signals from said first and second photo-detection means, means for summing all signals from said second photo-detection means, means for comparing the sum with a threshold and detecting the defect if the sum is larger than the threshold, means for detecting a signal of a predetermined magnitude order of the signals from said first photo-detection means when said sum is smaller than said threshold, means for selecting a signal of a predetermined magnitude order of the signals from said second photo-detection means, means for comparing said predetermined magnitude order signals, and means for detecting the defect if said predetermined magnitude order signal selected from the signals of said second photo-detection means is larger.

A circular pattern discriminator for use in a pattern defect inspection apparatus for detecting a defect in pattern including a circular pattern formed on a semiconductor wafer by scanning said wafer with a converged coherent light, comprising:

• photo-detector means provided in each of a plurality of directions of reflected diffraction lights generated when a defectless circular pattern under scanning along a plurality of predetermined paths is irradiated at edge portions thereof, for providing a signal when there is present a reflected diffraction light, wherein said edge portion, if defectless, provides the diffraction light in a single direction, said single direction being determined by an angle of said edge portion, and wherein when said circular pattern is scanned along any one of said paths, occurrence order of first and second directions of consecutive two reflected diffraction lights occurring when said coherent light is first at a first edge portion and is then a second edge portion, respectively, of said circular pattern, are predetermined dependng upon the path;
• and
• means for determining whether the pattern under scanning is a circular pattern or not, said determination means including:
• (a) means for storing value relating to a duration of time necessary for said coherent light to pass through said circular pattern;
• (b) gating means each coupled to the associated one of said photo-detector means, each gating means gating (i.e., transmitting) the signal of the associated photo-detector means only when said associated photo-detector means alone detects the presence of the reflected diffraction light and the other photo-detector means do not;
• and
• (c) means for storing the occurrence order of said first and second directions for each path, wherein said determining means determines a pattern under scan to be a circular pattern when consecutive two pulse signals transmitted from any two gating mens are one of said occurrence orders and are occurring within said value relating to said period of time.