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US 4,729,941 AGranted
Photoresist processing solution with quaternary ammonium hydroxide
AssigneesHoechst Japan Limited, Nisso Petrochemical Industries Co., Ltd.
InventorsKunio Itoh, Kimio Watabe, Masahiro Shiozaki
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Abstract
A photoresist processing solution includes a 2-hydroxyethyl-(mono-or polyoxyethyl) trialkyl ammonium hydroxide and is used in a process for development of photoresists having a solubility in aqueous alkaline solution which is a function of exposure to light.
Claims4
A photoresist processing solution consisting essentially of:
- (a) a quaternary ammonium hydroxide of the formula I represented by the formula ##STR3## wherein R, R.sup.1 and R.sup.2 are the same and each is a methyl group;
- and
- n is a positive number of 1;
- and
- (b) a solvent in which compound (a) is dissolved in a concentration of from about 0.05 to 30 wt. %, such that said solution is suitable for developing or stripping a radiation-imaged photoresist coating, wherein said solvent is selected from the group consisting of water, a water-miscible organic solvent, and mixtures thereof.
2 more elements
Dependencies are inferred from the claim text.