Method of making multilayered interconnects using hillock studs formed by sintering
AssigneeKabushiki Kaisha Toshiba
InventorsYasukazu Mase, Masahiro Abe, Masaharu Aoyama
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Abstract
A method of manufacturing a semiconductor device comprising the steps of preparing a semiconductor substrate on which a first insulation film is formed, forming a first conductive layer on the first insulation film, forming a hillock of the first conductive layer, forming a second insulation film on the structure, removing that portion of the second insulation film, in self-align with the hillock, which is on the hillock, thereby forming a contact hole leading to the first conductive layer, and forming on the structure a second conductive layer extending into the contact hole and contacting the first conductive layer.
Claims13
A method of manufacturing a semiconductor device the steps of:
- preparing a semiconductor substrate on which a first insulation film is formed;
- forming a first metal layer on said first insulation film;
- forming a hillock of said first metal layer;
- forming a second insulation film on said first metal layer;
- removing that portion of said second insulation film, in self-alignment with said hillock, which is on said hillock, thereby forming a contact hole leading to said hillock;
- and
- forming on said second insulation film a second metal a second metal layer extending into said contact hole and contacting said hillock,
- wherein said step of forming a hillock comprises the steps of forming a hillock-suppressing film having a hillock-suppressing function on said first metal layer, forming a hole in said hillock-suppressing film, and thermally treating said first metal layer to form a hillock of said first metal layer, which extends into said hole formed in said hillock-suppressing film.
A method of manufacturing a semiconductor device comprising the steps of:
- preparing a semiconductor substrate on which a first insulation film is formed;
- forming a first metal layer on said first insulation film;
- forming on said first metal layer a second insulation film having a hillock-suppressing function;
- forming a third insulation film on said second insulation film;
- forming a hole in said second and third insulation films;
- forming a hillock of said first metal layer, which extends into said hole formed in said second and third insulation films, by thermally heating said first metal layer;
- and
- forming on said third insulation film a second metal layer extending into said hole and contacting said hillock.
Dependencies are inferred from the claim text.