Method for plasma - coating a semiconductor body
AssigneeEnergy Conversion Devices, Inc.
InventorsArindam Banerjee, Prem Nath, Herbert C. Ovshinsky
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Abstract
A method for the plasma coating of a layer of material atop a semiconductor body, said method and apparatus adapted to substantially prevent damage to the semiconductor body by energetic vaporized species developed during the coating process. The invention has particular utility in the high volume fabrication of thin film semiconductor devices and may be readily adapted to provide the transparent conductive electrode of photoresponsive devices in a continuous roll-to-roll deposition process.
Claims16
A method of manufacturing a semiconductor device of the type including a layer of transparent, electrically conductive material in electrical communication with and in superposed relationship to a body of semiconductor material;
- said method including the steps of:
- providing said semiconductor body;
- depositing said layer of transparent conductive material in a two step process;
- the first step of the two step process comprises:
- depositing a layer of protective transparent conductive material atop the body of semiconductor material by a first set of deposition parameters, said protective material adapted to substantially prevent damage to the semiconductor body by energetic vaporized species developed during th esubsequent sputtering deposition of transparent conductive material;
- and the second step of said two step process comprises:
- sputtering said transparent, conductive material atop the layer of protective material;
- said sputtering step differing in at least one material deposition parameter from the deposition parameters of said first set, whereby the transparent conductive material is coated upon the semiconductor body at a high rate of deposition without damaging said semiconductory body.
Dependencies are inferred from the claim text.