Semiconductor power module

Semiconductor power module, comprising a substrate formed of metallized ceramic, at least one semiconductor power component with a base surface soldered to said metallized ceramic, said metallized ceramic substrate including a ceramic plate, a structured metal foil disposed on said ceramic plate, and a substantially smooth metal foil disposed on said structured metal foil, said structured metal foil having metal surfaces defining continuous interspaces for vapor and fluid transport therebetween forming a heat conduit integrated into the semiconductor power module, said heat conduit including a condensation area having a larger surface than said base surface, over which dissipation heat from said semiconductor power component is distributed.

Semiconductor power module, comprising a substrate formed of metallized ceramic, at least one semiconductor power component with a base surface soldered to said metallized ceramic, said metallized ceramic substrate including a ceramic plate, a structured metal foil disposed on said ceramic plate, and another metal foil having a side joined to said structured metal foil, said side of said other metal foil having capillaries formed therein forming a heat conduit integrated into the semiconductor power module, said heat conduit including a condensation area having a larger surface than said base surface, over which dissipation heat from said semiconductor power component is distributed.

Semiconductor power module, comprising a substrate formed of metallized ceramic, at least one semiconductor power component with a base surface soldered to said metallized ceramic, said semiconductor power component being disposed on a given heating zone of the module, said metallized ceramic substrate including a ceramic plate, a structured metal foil disposed on said ceramic plate, another ceramic plate disposed on said structured metal foil, said other ceramic plate having relatively larger openings formed therein in vicinity of said given heating zone, and another metal foil having a side facing said other ceramic plate, said side having capillaries formed therein emanating radially from the center of said heating zone forming a heat conduit integrated into the semiconductor power module, said heat conduit including a condensation area having a larger surface than said base surface, over which dissipation heat from said semiconductor power component is distributed, said other ceramic plate having relatively smaller openings formed therein in vicinity of said condensation area.

Semiconductor power module, comprising a substrate formed of metallized ceramic, at least one semiconductor power component with a base surface soldered to said metallized ceramic, said metallized ceramic substrate including a ceramic plate, a structured metal foil disposed on said ceramic plate, a porous ceramic plate disposed on said structured metal foil, and a substantially smooth metal foil disposed on said porous ceramic plate together forming a heat conduit integrated into the semiconductor power module, said heat conduit including a condensation area having a larger surface than said base surface, over which dissipation heat from said semiconductor power component is distributed.

Semiconductor power module, comprising a substrate formed of metallized ceramic, at least one semiconductor power component with a base surface soldered to said metallized ceramic, said metallized ceramic substrate including a ceramic plate, and a metal foil having a structured side directly bonded to said ceramic plate, said side having channels for vapor transport and capillaries for fluid transport formed therein adjacent each other forming a heat conduit integrated into the semiconductor power module, said heat conduit including a condensation area having a larger surface than said base surface, over which dissipation heat from said semiconductor power component is distributed.