Infrared display device

A display device array comprising:

• a semiconductor substrate having a first surface portion including an array of inverted pyramid cavities formed in said first surface;
• a plurality of infrared generating cells, each infrared generating cell comprising a resistive element and a diode;
• each of said diodes formed on the first surface of said semiconductor substrate adjacent to an inverted pyramid cavity;
• each of said diodes connected to a resistive element;
• each of said resistive elements bridging one of said inverted pyramid cavities.

The method of fabricating a display device on a semiconductor, said method comprising the following steps:

• coating a silicon dioxide layer on a first surface of said semiconductor;
• etching at least one first window in said silicon dioxide layer to outline the desired dimensions and shape of the desired resistive element;
• doping the area defined by said window to form a resistive element;
• oxidizing said first surface of said semiconductor, including said window;
• opening at least one second window in said oxidized layer to outline a square superimposed on said resistive element;
• etching the area defined by said second window to form an inverted pyramid-shaped cavity;
• and,
• establishing electrical connections to said resistive elements.