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US 4,700,457 AGranted
Method of making multilayer capacitor memory device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTakayuki Matsukawa
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Abstract
A semiconductor device comprising a capacitor of a laminated structure and a method of manufacturing thereof, in which first conductive layer and second conductive layer of different materials or different compositions are stacked alternately with dielectric films interposed therebetween and the first conductive layers and the second conductive layers are interconnected respectively at a time by suitably combining a selective etching method and an anisotropic etching method.
Claims6
A method of manufacturing of a capacitor included in a semiconductor device formed on a semiconductor substrate, comprising the steps of:
- forming multiple layered film over the whole surface of said semiconductor substrate by placing alternately first conductive layer and second conductive layer of different etching characteristics with dielectric film therebetween,
- applying an anisotropic etching process to said multiple layered film formed by said first step so that said multiple layered film remain only in predetermined regions with all the side faces of said multiple layered film being exposed,
- etching all the side faces of said multiple layered film exposed by said second mentioned step using an etching process preferentially acting on said first conductive layers so that the side faces of said first conductive layers are recessed inward with the side faces of said second conductive layers being kept unchanged,
- filling the gaps made by said recession of said first conductive layers with an insulating material, and
- electrically interconnecting said second conductive layers having the exposed side faces by using a conductor.
2 more elements
Dependencies are inferred from the claim text.