Apparatus for producing high quality epitaxially grown semiconductors

An apparatus for close-space epitaxial layering in a gas overpressure environment comprising:

• a high temperature high pressure furnace having an inner chamber made of ceramic material surrounded by insulation material and high pressure resistant metal which are resistant to reaction with materials and gases used in epitaxial layering process;
• gas flow and pressure control gas feed line means for allowing selective high pressure inert and reducing gases and/or reactive gases to flow therethrough for pressurizing and purging said inner chamber throughout the entire epitaxial process;
• and
• a reusable demountable containment means having pressure equalizing vent means in which epitaxial layering processes can be repeatedly performed in a semi-confinement high temperature high gas overpressure environment within said containment means wherein said containment means has a substrate and growth source material therein in close-space area and containment means is positioned within said inner chamber of said furnace during said epitaxial layering process wherein said selective gases are supplied to the interior of said containment means through said pressure equalizing vent means to confine said growth source material flow to said close-space area.