Method of measuring resist pattern
AssigneeHitachi, Ltd.
InventorsToshiharu Matsuzawa, Kozo Mochiji
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Abstract
A method of measuring a resist pattern in which size and/or position of a latent image formed in the resist film by irradiation, is measured by Auger electron spectroscopy or a like method. With this method, since there is no need to develop when the resist pattern is not acceptable, manufacturing costs are decreased. By adjusting developing time by replying upon the data from the latent image, furthermore, high yield processing can be effected more precisely.
Claims11
A method of measuring a resist pattern wherein a pattern width and/or misalignment of a latent image formed in a resist film on a substrate by irradiation, is measured by determining the distribution of elements within said resist film and said latent image relying upon Auger electron spectroscopy.
Dependencies are inferred from the claim text.