Vertical semiconductor processor
AssigneeEnergy Conversion Devices, Inc.
InventorHerbert Ovshinsky
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Abstract
A vertical processor for the continuous deposition of semiconductor alloy material by glow discharge techniques. The vertical processor includes a plurality of operatively interconnected deposition chambers, at least one chamber of which includes a generally vertical cathode plate about each of the opposed faces of which a plasma region is developed and a substrate continuously passes for the deposition of semiconductor alloy material thereonto. Through the utilization of the vertical deposition scenario, the length of the processor may be substantially foreshortened, power consumption may be substantially decreased and feedstock gases may be more efficiently utilized.
Claims21
An improved method for the continuous vapor deposition of a layer of semiconductor alloy material of a preselected conductivity type in each of a plurality of discrete deposition chambers, each chamber including a plasma region in which a precursor gaseous mixture of process gases is decomposed and deposited onto a substrate continuously advanced therethrough;
- the improved method adapted to foreshorten the length of at least one of the chambers and increase the utilization of the precursor gaseous mixture including the steps of:
- directing the substrate through at least one of the chambers in a non-linear path of travel;
- developing a plurality of plasma regions in the chambers through which the substrate is non-linearily directed;
- at least two of the plurality of plasma regions disposed in different non-linear portions of the path of travel through which the substrate is advanced.
Dependencies are inferred from the claim text.