Method for resistor trimming by metal migration
AssigneeMotorola, Inc.
InventorRobert L. Vyne
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Abstract
A method for trimming a diffused or implanted resistor located within an integrated circuit is disclosed. This technique for trimming a resistor requires the use of high current pulses and geometric shaped metal contacts. The current pulses react with the electropositive metal atoms in the thin film conductor and cause the metal atoms to migrate to another location, thus altering the value of the resistor by progressively decreasing the conductivity of the resistor.
Claims7
A method for trimming the values of a passive device formed at the surface of a semiconductor substrate, comprising the steps of:
- forming metal contact regions at least at each end of said device;
- causing an electrical current to flow through said device in a single direction only, said current being sufficient to cause metal to migrate from at least one contact region toward another contact region;
- and
- terminating said electrical current after a predetermined length of time.
A method of trimming a resistor found in a semiconductor substrate as part of an integrated circuit, comprising:
- forming at least first and second contacts for making contact to the resistor;
- and
- applying a pulsating current between the first and second contacts, and causing metal migration to occur from the first contact to the second contact due to the pulsating current thereby changing the ohmic value of the resistor to a determined value.
Dependencies are inferred from the claim text.