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US 4,603,101 AGranted
Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
AssigneeGeneral Electric Company
InventorJames V. Crivello
Life of this patent
Estimating the term…
Abstract
t-Butylvinylaryl ethers are provided which can be used to make t-butyl substituted polyaryl ethers and photoresist compositions. The photoresist compositions can be made by combining the t-butylpolyaryl ethers with aromatic onium salts.
Claims5
A photoresist composition comprising
- (A) a polystyrene consisting essentially of chemically combined units of the formula ##STR9## (B) an effective amount of a cationic photoinitiator, (C) from 10 to 95 parts of an inert organic solvent per part of (A),
- where R is a monovalent radical selected from the class consisting of C.sub.(1-8) alkyl radicals and C.sub.(6-14) aryl radicals, R.sup.1 and R.sup.2 are the same or different C.sub.(1-8) monovalent alkyl radicals, R.sup.3 is a monovalent radical selected from hydrogen and C.sub.(1-3) alkyl, and R.sup.4 is a monovalent radical selected from hydrogen, C.sub.(1-3) alkyl and mixtures thereof, R.sup.5 is selected from the same or different C.sub.(1-8) alkyl radicals, Cl, Br, NO.sub.2, CN, C.sub.(1-8) alkoxy and C.sub.(1-8) alkyl ester and a is equal to 0 to 2 inclusive.
Dependencies are inferred from the claim text.