Method of selectively forming an insulation layer
AssigneeKabushiki Kaisha Toshiba
InventorsKeiji Horioka, Haruo Okano, Makoto Sekine
Life of this patent
Estimating the term…
Loading patent…
AssigneeKabushiki Kaisha Toshiba
InventorsKeiji Horioka, Haruo Okano, Makoto Sekine
Estimating the term…
An insulation layer is selectively formed by exposing the surface of a workpiece to an atmosphere comprising a mixture of a halogen-based gas and a raw gas containing a compoundable element chemically bondable with an element of a material constituting surface layer of the workpiece to form an insulating compound. The surface layer of the workpiece is formed of a non-insulating material, such as a metallic material or a semiconductor material. Light rays are directly irradiated on the selected region or regions of the surface of the workpiece through the atmosphere of the gaseous mixture, thereby dissociating said halogen-based gas. As a result, a layer comprising the insulating compound is formed on the selected region of the surface of the workpiece on which the light rays have been directly irradiated.
A method of selectively forming an insulation layer which comprises the steps of:
A method of selectively forming a silicon dioxide layer which comprises the steps of:
Dependencies are inferred from the claim text.